electron concentration meaning in Chinese

电子集合
电子密度
电子浓度

Unpaired - electron concentration
弧单电子浓度
Algan / gan hemt has high breakdown electric field , fast electron drift velocity and large electron concentration , so it has been used more and more in high frequency and large power fields
Algan / ganhemt由于具有击穿电压高、电子漂移速度快和电子浓度大等特点,已被越来越多地应用于高频及大功率领域。
Second , in luminescence materials hole or electron concentration will change with the doping content . so we expand the hole or electron concentration in taylor expansion and calculat the optimum doping contents . for several semiconductor materials such as zns : mn , silicon doped er and gaas , gap , gan doped different materials , we calculat their optimum doping contents which arc close to some experimental results
应用该表达式，给出了各种不同的制备方法zns掺mn 、硅基掺铒、以及gaas 、 gap 、 gan掺不同元素制出的发光材料，对最佳掺杂含量进行了理论上的计算，理论计算值与实验数据相符合。